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| NLAS325 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS325 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent selection of 2 analog/digital signals. Available in the Ultra-Small 8 package. The use of advanced 0.6 CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. http://onsemi.com MARKING DIAGRAM 8 8 1 US8 US SUFFIX CASE 493 * * * * * * * * * * * On Resistance is 20 Typical at 5.0 V Matching is < 1 Between Sections 2 - 6 V Operating Range Ultra Low < 5 pC Charge Injection Ultra Low Leakage < 1 nA at 5.0 V, 25 C Wide Bandwidth > 200 MHz, -3 dB CMOS/TTL Compatible 2000 V ESD (HBM) Ron Flatness +/- 6 at 5.0 V US8 Package Independent Enables; One Positive, One Negative L7 1 D L7 = Device Code D = Date Code PIN ASSIGNMENT 1 2 NO1 1 8 VCC 3 4 5 COM1 2 7 IN1 6 7 IN2 3 6 COM2 8 NO1 COM1 IN2 GND NC2 COM2 IN1 VCC GND 4 5 NC2 FUNCTION TABLE On/Off Enable Input Analog Switch 1 Off On Analog Switch 2 On Off Figure 1. Pinout L H ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. (c) Semiconductor Components Industries, LLC, 2002 1 January, 2002 - Rev. 2 Publication Order Number: NLAS325/D NLAS325 MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC IGND TSTG TL TJ qJA PD MSL FR VESD DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Sink Current DC Supply Current per Supply Pin DC Ground Current per Ground Pin Storage Temperature Range Lead Temperature, 1 mm from Case for 10 Seconds Junction Temperature under Bias Thermal Resistance Power Dissipation in Still Air at 85_C Moisture Sensitivity Flammability Rating ESD Withstand Voltage Oxygen Index: 28 to 34 Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) (Note 1) VI < GND VO < GND Parameter Value *0.5 to )7.0 *0.5 to )7.0 *0.5 to )7.0 *50 *50 $50 $100 $100 *65 to )150 260 )150 250 250 Level 1 UL 94 V-0 @ 0.125 in > 2000 > 200 N/A V Unit V V V mA mA mA mA mA _C _C _C _C/W mW Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum-rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2-ounce copper trace with no air flow. 2. Tested to EIA/JESD22-A114-A. 3. Tested to EIA/JESD22-A115-A. 4. Tested to JESD22-C101-A. RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V NORMALIZED FAILURE RATE Parameter Min 2.0 GND GND *55 0 0 Max 5.5 5.5 VCC )125 100 20 Unit V V V _C ns/V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130_C TJ = 120_C TJ = 100_C TJ = 110_C TJ = 90_C TJ = 80_C 100 TIME, YEARS 1 1 10 1000 Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS325 DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VIH Parameter Minimum High-Level Input Voltage, Select Inputs Condition VCC 2.0 2.5 3.0 4.5 5.5 VIL Maximum Low-Level Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 IIN ICC Maximum Input Leakage Current, Select Inputs Maximum Quiescent Supply Current VIN = 5.5 V or GND Select and VIS = VCC or GND 0 V to 5.5 V 5.5 *55_C to 25_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $0.2 4.0 t85_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 4.0 t125_C 1.5 1.9 2.1 3.15 3.85 0.5 0.6 0.9 1.35 1.65 $2.0 8.0 mA mA V Unit V DC ELECTRICAL CHARACTERISTICS - Analog Section Guaranteed Limit Symbol RON Parameter Maximum "ON" Resistance (Figures 16 - 22) Condition VIN = VIL or VIH VIS = GND to VCC IINI v 10.0 mA VCC 2.5 3.0 4.5 5.5 RFLAT (ON) ON Resistance Flatness (Figures 16 - 22) VIN = VIL or VIH IINI v 10.0 mA VIS = 1 V, 2 V, 3.5 V VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 4.5 *55_C to 25_C 85 45 30 25 4 t85_C 95 50 35 30 4 t125_C 105 55 40 35 5 W Unit W INC(OFF) INO(OFF) ICOM(ON) NO or NC Off Leakage Current (Figure 8) COM ON Leakage Current (Figure 8) 5.5 5.5 1 1 10 10 100 100 nA nA http://onsemi.com 3 NLAS325 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit VCC Symbol tON Parameter Turn-On Time (Figures 11 and 12) Test Conditions RL = 300 W, CL = 35 pF (Figures 4 and 5) (V) 2.5 3.0 4.5 5.5 tOFF Turn-Off Time (Figures 11 and 12) RL = 300 W, CL = 35 pF (Figures 4 and 5) 2.5 3.0 4.5 5.5 tBBM Minimum Break-Before-Make Time VIS = 3.0 V (Figure 3) RL = 300 W, CL = 35 pF 2.5 3.0 4.5 5.5 *Typical Characteristics are at 25_C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 pF VIS (V) 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 2.0 2.0 3.0 3.0 *55_C to 25_C Min 5 5 2 2 1 1 1 1 1 1 1 1 Typ* 23 16 11 9 7 5 4 3 12 11 6 5 Max 35 24 16 14 12 10 6 5 t85_C Min 5 5 2 2 1 1 1 1 1 1 1 1 Max 38 27 19 17 15 13 9 8 t125_C Min 5 5 2 2 1 1 1 1 1 1 1 1 Max 41 30 22 20 18 16 12 11 ns ns Unit ns ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) VCC Symbol BW Parameter Maximum On-Channel -3dB Bandwidth or Minimum Frequency Response (Figure 10) Maximum Feedthrough On Loss Condition VIN = 0 dBm VIN centered between VCC and GND (Figure 6) VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 6) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 6) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 W, CL = 1000 pF Q = CL * DVOUT (Figure 7) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF VIS = 5.0 VPP sine wave f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 6) V 3.0 4.5 5.5 3.0 4.5 5.5 3.0 4.5 5.5 Typical 25C 145 170 175 *2 *2 *2 *93 *93 *93 pC 3.0 5.5 1.5 3.0 dB dB Unit MHz VONL VISO Off-Channel Isolation (Figure 9) Q Charge Injection Select Input to Common I/O (Figure 14) THD Total Harmonic Distortion THD + Noise (Figure 13) Channel-to-Channel Crosstalk % 5.5 0.1 dB 5.5 3.0 *90 *90 VCT http://onsemi.com 4 NLAS325 DUT VCC 0.1 mF 300 Output VOUT 35 pF Input VCC GND tBMM 90% Output 90% of VOH Switch Select Pin GND Figure 3. tBBM (Time Break-Before-Make) VCC DUT VCC 0.1 mF Open Output VOUT 300 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50% Figure 4. tON/tOFF VCC DUT Output Open 300 VOUT 35 pF Input VCC 50% 0V VOH Output VOL 10% tOFF tON 10% 50% Input Figure 5. tON/tOFF http://onsemi.com 5 NLAS325 50 Reference Input Output 50 Generator 50 DUT Transmitted Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz VOUT VIN for VIN at 100 kHz to 50 MHz Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT Open Output VIN VCC GND CL Output Off Off VOUT VIN On Figure 7. Charge Injection: (Q) 100 10 LEAKAGE (nA) 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 -55 -20 25 70 85 125 TEMPERATURE (C) Figure 8. Switch Leakage vs. Temperature http://onsemi.com 6 NLAS325 0 0 1.0 -20 2.0 3.0 (dB) -40 (dB) 4.0 Off Isolation 5.0 6.0 7.0 -80 VCC = 5.0 V TA = 25_C 8.0 9.0 100 200 10.0 0.01 VCC = 5.0 V TA = 25C 0.1 1 10 PHASE SHIFT Bandwidth (ON-RESPONSE) +15 +10 +5 0 -5 -10 -15 -20 -25 -30 -35 100 300 PHASE () 5 -60 -100 0.01 0.1 1 10 FREQUENCY (MHz) FREQUENCY (MHz) Figure 9. Off-Channel Isolation Figure 10. Typical Bandwidth and Phase Shift 30 25 20 15 10 5 0 2.5 tOFF (ns) tON (ns) TIME (ns) 30 VCC = 4.5 V 25 20 15 10 5 0 -55 tON tOFF TIME (ns) 3 3.5 4 4.5 5 -40 25 Temperature (C) 85 125 VCC (VOLTS) Figure 11. tON and tOFF vs. VCC at 255C Figure 12. tON and tOFF vs. Temp 1 VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%) 3.0 2.5 2.0 Q (pC) 1.5 1.0 0.5 0 VCC = 3 V VCC = 5 V 0.1 VINpp = 5.0 V VCC = 5.5 V 0.01 1 10 FREQUENCY (kHz) 100 -0.5 0 1 2 VCOM (V) 3 4 Figure 13. Total Harmonic Distortion Plus Noise vs. Frequency Figure 14. Charge Injection vs. COM Voltage http://onsemi.com 7 NLAS325 100 10 1 ICC (nA) 0.1 0.01 0.001 0.0001 0.00001 -40 VCC = 3.0 V 20 VCC = 5.0 V -20 0 20 60 80 100 120 0 0.0 1.0 VCC = 5.5 V 2.0 3.0 VIS (VDC) 4.0 5.0 6.0 RON () 60 VCC = 2.5 V 40 VCC = 3.0 V VCC = 4.0 V 100 VCC = 2.0 V 80 Temperature (C) Figure 15. ICC vs. Temp, VCC = 3 V & 5 V Figure 16. RON vs. VCC, Temp = 255C 100 90 80 70 RON () RON () 125C 25C -55C 85C 0.5 1.0 1.5 2.0 2.5 60 50 40 30 20 10 0 0.0 100 90 80 70 60 50 40 30 20 10 0 0.0 125C 0.5 -55C 85C 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 25C VIS (VDC) Figure 17. RON vs Temp, VCC = 2.0 V Figure 18. RON vs. Temp, VCC = 2.5 V 50 45 40 35 RON () RON () 30 25 20 15 10 5 0 0.0 -55C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 125C 85C 25C 30 25 20 15 10 5 0 0.0 -55C 85C 125C 25C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VIS (VDC) VIS (VDC) Figure 19. RON vs. Temp, VCC = 3.0 V Figure 20. RON vs. Temp, VCC = 4.5 V http://onsemi.com 8 NLAS325 25 125C 25 20 20 125C RON () 25C 10 85C 5 -55C RON () 15 15 25C 10 85C 5 -55C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 5.0 V DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number NLAS325US Circuit Indicator NL Technology AS Device Function 325 Figure 22. RON vs. Temp, VCC = 5.5 V Package Suffix US Package Type US8 Tape and Reel Size 178 mm (7) 3000 Unit CAVITY TAPE TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS DIRECTION OF FEED TAPE LEADER NO COMPONENTS 400 mm MIN Figure 23. Tape Ends for Finished Goods TAPE DIMENSIONS mm 2.00 4.00 4.00 1.50 TYP 1.75 0.30 8.00 + 0.10 - 3.50 $ 0.25 1 1.00 0.25 TYP DIRECTION OF FEED Figure 24. US8 Reel Configuration/Orientation http://onsemi.com 9 NLAS325 t MAX 1.5 mm MIN (0.06 in) 20.2 mm MIN (0.795 in) 13.0 mm $0.2 mm (0.512 in $0.008 in) A 50 mm MIN (1.969 in) FULL RADIUS G Figure 25. Reel Dimensions REEL DIMENSIONS Tape Size 8 mm T and R Suffix US A Max 178 mm (7 in) G 8.4 mm, + 1.5 mm, -0.0 (0.33 in + 0.059 in, -0.00) t Max 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET HOLE Figure 26. Reel Winding Direction http://onsemi.com 10 NLAS325 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493-01 ISSUE O -X- A 8 5 -Y- J DETAIL E B L 1 4 R S U C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION A" DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055") PER SIDE. 4. DIMENSION B" DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSION. INTER-LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055") PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076-0. 0203 MM. (300-800 INCH). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED 0.0508 (0.0002"). MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.28 0.44 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.011 0.017 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC P G -T- SEATING PLANE D 0.10 (0.004) K M 0.10 (0.004) T N TXY V H R 0.10 TYP M F DETAIL E DIM A B C D F G H J K L M N P R S U V 3.8 1.8 TYP 0.5 TYP http://onsemi.com 11 EEE EEE EEE EEE EEE EEE EEE 1.0 EEE EEE EEE EEE EEE EEE EEE 0.3 TYP (mm) NLAS325 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 NLAS325/D |
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